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Блог компании IXYS IXFN56N90P 900V 56A N-Channel Enhancement Mode Polar™ HiPerFET™ Power MOSFET Transistors

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Китай ShenZhen Mingjiada Electronics Co.,Ltd. Сертификаты
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компания Блог
IXYS IXFN56N90P 900V 56A N-Channel Enhancement Mode Polar™ HiPerFET™ Power MOSFET Transistors
последние новости компании о IXYS IXFN56N90P 900V 56A N-Channel Enhancement Mode Polar™ HiPerFET™ Power MOSFET Transistors

Shenzhen Mingjiada Electronics Co., Ltd. supplies the IXYS IXFN56N90P 900V 56A N-channel enhancement-mode Polar™ HiPerFET™ power MOSFET.

 

The IXFN56N90P is an N-channel enhancement-mode power MOSFET from the IXYS Polar™ HiPerFET™ series, housed in an SOT-227B package. It features high voltage withstand capability, high current capacity, a fast intrinsic body diode and low package inductance. Designed for high-reliability applications such as high-voltage, high-power switching conversion, motor drives and industrial power supplies, it is a mainstream high-voltage power switching device in industrial high-power power supply topologies.

 

I. IXFN56N90P Product Details
The IXFN56N90P is primarily positioned as an avalanche-rated high-voltage power MOSFET, integrating a fast intrinsic rectifying diode. Unlike standard high-voltage MOSFETs, the HiPerFET™ process optimises the reverse recovery characteristics of the body diode, making it particularly well-suited for hard-switching and bidirectional current flow topologies.

 

1. Key Electrical Parameters
Drain-source breakdown voltage V₍DSS₎: 900 V; continuous drain current I_D at a case temperature of 25 °C: 56 A; pulsed peak drain current I_DM: 224 A; on-resistance R₍DS (on)₎ typical value at VGS = 10 V: 0.145 Ω; Gate-source voltage V_GSS: continuous ±30 V, transient withstand voltage ±40 V; IXFN56N90P rated power dissipation: 1000 W; input capacitance Ciss: typical 23 nF; reverse recovery time trr: typical 300 ns; balanced switching speed, optimising both power loss and EMI control.

 

2. Key Product Features
The IXFN56N90P features an avalanche rating, enabling it to withstand avalanche surges from unclamped inductive loads; its low package inductance reduces switching oscillations and spike voltages; Integrated fast intrinsic diodes eliminate the need for some external freewheeling diodes, simplifying the power circuit; high power density and a short thermal path in the base-mounted design make it suitable for high-power heat sinks; compliant with RoHS lead-free specifications, with a moisture sensitivity level (MSL) of 1, low storage management requirements and stable performance during long-term storage.

 

3. Typical Applications
The IXFN56N90P is suitable for high-power industrial applications such as switching power supplies and resonant power supplies, high-voltage DC-DC converters, industrial AC/DC motor drivers, servo and robotic motion control, laser drive power supplies, photovoltaic inverters, UPS (uninterruptible power supply) systems, and power conversion circuits in welding equipment.

 

4. Packaging Specifications
SOT-227B screw-mount power module packaging with a metal substrate structure; can be directly secured to a heat sink; offers excellent thermal conductivity; suitable for continuous high-current operation; commonly used in the main power branches of system power boards.

 

последние новости компании о IXYS IXFN56N90P 900V 56A N-Channel Enhancement Mode Polar™ HiPerFET™ Power MOSFET Transistors  0

 

II. IXFN56N90P Procurement, Selection and Buyer’s Guide
1. Key Considerations for Selection
When selecting a device, prioritise confirming the system bus voltage. For the 900 V withstand voltage rating, sufficient derating must be allowed; it is recommended that conventional DC bus voltages be kept below 600 V to prevent voltage spikes from causing device breakdown; Regarding current ratings, the 56A specification is based on a case temperature of 25°C; sustained current-carrying capacity will deteriorate significantly as the temperature rise increases. Designs involving prolonged full-load operation must allow for current headroom and verify the heat sink’s performance through thermal simulation.
In terms of topology compatibility, the HiPerFET™ excels in H-bridges, full bridges and resonant converters that require body diode freewheeling; For zero-voltage soft-switching topologies, compare with standard polar MOSFETs of the same voltage rating to assess cost differences; simultaneously verify gate drive capability—as this device has a gate charge (Qg(on)) of approximately 375 nC, a gate driver IC capable of handling sufficient sink and source currents must be selected to prevent slow switching and excessive thermal loss.

 

2. Procurement Verification and Risk Mitigation
During procurement, carefully verify the silkscreen part number IXFN56N90P, the original manufacturer’s batch code and the outer packaging label to distinguish between brand-new, original devices, and those that are refabricated or remanufactured; whilst refabricated devices may be cheaper, they exhibit significant variations in avalanche withstand voltage and diode reverse recovery characteristics, making them unsuitable for mass production or high-reliability equipment; Prioritise requesting the original manufacturer’s datasheet and batch traceability documentation; where possible, carry out spot checks on on-resistance, breakdown voltage, gate leakage and diode reverse recovery characteristics.
Reference for alternative selection: Polar HiPerFET high-voltage MOSFETs from the same series. Prioritise verification of the four core parameters: Vds, Id, Rds(on) and trr. Do not substitute with standard high-voltage MOSFETs directly, as the body diodes in standard MOSFETs have slow recovery times, making them highly prone to diode failure and breakdown in motor drivers and hard-switching full-bridge circuits.

 

3. Recommendations for Sample and Bulk Purchases
During the R&D phase, prioritise small-batch samples from authorised channels to validate the thermal performance, EMI and reliability of the complete system. For mass production orders, assess lead times in advance; as the original manufacturer’s standard lead times are relatively long, it is necessary to secure stock well in advance. When a project involves multiple BOMs, it is recommended to procure gate drivers, high-voltage capacitors and snubber circuit components simultaneously to ensure unified stock preparation.

 

III. Supply Quality and Delivery of Mingjiada Electronics Products
Shenzhen Mingjiada Electronics has specialised in the distribution of electronic components for many years and can provide a stable supply of genuine IXFN56N90P components. We also offer a stock buy-back service to meet both our customers’ procurement needs and their requirements for stock clearance.

 

1. Quality Control System
Mingjiada adheres strictly to official OEM supply channels; all IXFN56N90P components supplied are brand-new and genuine, and we do not accept refurbished, re-polished or salvaged components; Standardised quality inspection procedures are carried out upon receipt, including visual inspection of the exterior, silkscreen verification, random electrical testing and the archiving of batch documentation. We can provide Certificates of Conformity (COC) and batch traceability documents to meet industrial clients’ requirements for incoming material audits and quality traceability. Relying on a mature supply chain audit mechanism, we eliminate the risks of counterfeits and mixed materials at source, meeting the high reliability requirements for power devices in industrial power supplies and automation equipment.

 

2. Stock and Delivery Capabilities
Leveraging our dual-warehouse network in Shenzhen and Hong Kong, we maintain a constant stock of IXFN56N90P, enabling us to respond swiftly to R&D samples, small-batch trial production and large-volume orders; Standard orders are dispatched within 1–3 days, whilst urgent projects are prioritised to minimise customer project lead times; we also offer one-stop BOM fulfilment, coordinating the delivery of all project-related components—including gate drivers, isolators, capacitors and resistors—in a single shipment to reduce the costs associated with managing multiple suppliers.

 

3. Supporting Value-Added Services
Mingjiada has a dedicated power device technical support team to assist customers with IXFN56N90P part selection and derating, driver design, and thermal management consultancy; we support long-term framework stockholding to lock in prices and lead times, thereby hedging against the risk of fluctuations in original manufacturer lead times; we also provide stock buy-back services, evaluating and purchasing customers’ project end-of-run and obsolete materials to free up capital tied up in factory inventory.

Время Pub : 2026-10-27 11:34:26 >> список новостей
Контактная информация
ShenZhen Mingjiada Electronics Co.,Ltd.

Контактное лицо: Mr. Sales Manager

Телефон: 86-13410018555

Факс: 86-0755-83957753

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