Блог компании MOSFET Applications in AI Servers | Supplier of Infineon OptiMOS™, CoolMOS™, CoolSiC™, ROHM SiC MOSFETs and Microchip mSiC™ Series

With the explosive growth in demand for AI computing power, server power supply systems are rapidly evolving towards an 800V HVDC architecture. Mingjiada Electronics supplies Infineon’s OptiMOS™, CoolMOS™ and CoolSiC™, as well as ROHM’s SiC MOSFETs and Microchip’s mSiC™ series, providing comprehensive power semiconductor solutions for AI server power supply design.

I. Evolution of AI Server Power Architecture and Power Device Requirements

The power consumption of generative AI model training and inference clusters has now exceeded the megawatt level, with power per cabinet rapidly increasing from the traditional 10 kW to 100 kW or even higher. This transformation places unprecedented demands on power MOSFETs: lower on-state losses, greater surge withstand capability, higher thermal stability and superior switching characteristics.

Current AI server power supply architectures are evolving along three distinct technological pathways: step-up with current reduction (shifting from 12V/48V to 400V/800V high-voltage DC), reduction in the number of conversion stages (simplifying from multi-stage conversion to 800V → 48V → 12V → Core), and power delivery close to the chip. These changes have made silicon carbide (SiC) and silicon-based super-junction MOSFETs critical components.

II. Mingjiada Electronics: A Specialist Power MOSFET Supplier

Established in 1996, Shenzhen Mingjiada Electronics Co., Ltd. is a globally renowned authorised independent distributor of electronic components. Headquartered in Shenzhen, the company has established branches in Hong Kong, Japan, Russia and other locations. The company has obtained ISO 9001:2014 international quality management system certification and ISO 14001:2014 environmental management system certification, and specialises in distributing products from over 500 renowned manufacturers.

In the field of power devices, Mingjiada Electronics has established long-term, stable partnerships with leading international semiconductor manufacturers such as Infineon, ROHM and Microchip, ensuring product quality and supply reliability.

III. Detailed Overview of the Infineon Power MOSFET Series

1. OptiMOS™ 7 Series – Designed for Cloud Computing

The Infineon OptiMOS™ 7 series adopts an ‘application-oriented’ design philosophy, tailored to specific application requirements. The switching-optimised products in this series are specifically designed for future data centres, servers and telecommunications equipment, offering a Form of Performance (FOM) improvement of up to 25 per cent and significantly enhanced thermal management capabilities through the use of Source Down packaging.

The OptiMOS™ 7 25V MOSFETs are primarily aimed at intermediate bus converter (IBC) applications and are suitable for 48V voltage conversion to support AI core power supplies. The product portfolio is divided into two main technical categories: hard-switching and soft-switching, with a rated temperature of up to 175°C.

2. OptiMOS™ 6 Series – Setting a New Standard for DC-DC Conversion Efficiency

Infineon’s OptiMOS™ 6 80V MOSFETs, housed in a compact 5x6 mm² dual-sided heat-dissipating package, have been integrated into the IBC tier of AI server platforms from leading processor manufacturers. Application testing shows that their efficiency is approximately 0.4 per cent higher than previous solutions, equating to a saving of around 4.3 W per kW of load.

Rolling out this solution across a hyperscale data centre with 2,000 racks could save over 1.2 MWh of energy per hour. The product delivers superior switching performance in hard-switching topologies, enhancing energy efficiency by reducing conduction losses, whilst the dual-sided heat-dissipating package helps improve thermal management and increase power density.

3. CoolMOS™ 8 Series – The Benchmark for Super-Junction MOSFET Technology

Infineon’s CoolMOS™ 8 super-junction MOSFETs have enabled Mimi Electric’s 5.5 kW AI server power supply to achieve Titanium Plus efficiency certification. Compared to the CFD7 series, the CoolMOS™ 8 features an 18 per cent reduction in gate charge; compared to the P7 series, this figure rises to 33 per cent. The product boasts the fastest turn-off time on the market, with thermal performance improved by 14 per cent to 42 per cent compared to the previous generation.

The CoolMOS™ 8 integrates a fast body diode, enabling its widespread use across various applications ranging from low-power switching power supplies to high-power systems such as servers, telecommunications equipment and solid-state circuit breakers.

4. CoolSiC™ MOSFET G2 Series – Leader in Silicon Carbide Technology

Infineon’s second-generation 650V CoolSiC™ MOSFET is a core component in high-voltage power supplies for AI servers. In a 24kW battery backup unit (BBU) reference design, the DC-DC conversion stage, built around the CoolSiC MOSFET IMT65R033M2H, achieves a conversion efficiency exceeding 99 per cent.

Featuring a 650V breakdown voltage, a stable body diode, a junction temperature rating of 175°C and .XT packaging technology, this product demonstrates exceptional reliability under demanding operating conditions such as voltage spikes, high dv/dt transients and sustained thermal cycling.

IV. ROHM SiC MOSFET Series

ROHM’s 750V SiC MOSFET, the “SCT4013DLL”, has been adopted in AI server power supply BBUs, where it is configured within power supply units operating under a ±400V supply architecture. This product offers excellent high-temperature resistance with a maximum junction temperature of 175°C, enabling stable operation even within BBUs where heat generation is increasing due to rising voltage and power density.

In next-generation 800 V DC power supply architectures, where the supply voltage to the internal battery pack of the BBU is approximately 560 V, ROHM’s 750 V SiC MOSFETs can also be utilised. ROHM has published the white paper “ROHM’s 800 V DC Architecture Solutions for AI Servers”, providing a comprehensive solution for AI server power supply design.

V. Microchip mSiC™ Series

Microchip’s 3.3 kV HV-D3 mSiC power module is specifically designed for solid-state transformer (SST) applications in AI data centres. The module integrates a 3.3 kV silicon carbide MOSFET and a Schottky diode within an industry-standard 62 mm package, enabling highly efficient power delivery directly from the medium-voltage grid to the server rack.

Microchip’s mSiC MOSFET technology maintains highly competitive RDS(on) stability across a wide temperature range. Compared to low-voltage SiC solutions, the number of series components required is significantly reduced—by approximately half—when connected to 13.8 kV or 34.5 kV grids. The module supports applications ranging from 100 to 300 A and is suitable for solid-state transformers, medium-voltage motor drives and industrial power systems.

VI. Typical Application Scenarios for AI Server Power Supplies

IBC Intermediate Bus Conversion: OptiMOS™ 7/6 High-efficiency DC-DC conversion, enhanced power density

PFC/LLC Primary Side: CoolMOS™ 8 Titanium-level efficiency, fast switching

High-Voltage BBU: CoolSiC™ G2 99%+ efficiency, high reliability

800V HVDC: ROHM SiC MOSFETs High-temperature resistance, low losses

Solid-state transformers: Microchip mSiC™ Medium-voltage direct conversion, reduced number of conversion stages

Conclusion

With the rapid expansion of AI computing infrastructure, server power supplies face extremely stringent requirements in terms of power density, conversion efficiency and high-temperature reliability. The Infineon OptiMOS™, CoolMOS™ and CoolSiC™, as well as the ROHM SiC MOSFETs and Microchip mSiC™ series supplied by Mingjiada Electronics, have become key choices for building highly energy-efficient AI server power supplies, thanks to their leading technical performance and stable supply capabilities.

For further product information or to request a quotation, please visit the Mingjiada Electronics website (www.hkmjd.com) or contact our sales team.

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