RBN75H65T1FPQ-A0 Integrated Circuit Chip 650V 75A Trench IGBT Transistors TO-247-3

RBN75H65T1FPQ-A0 Integrated Circuit Chip 650V 75A Trench IGBT Transistors TO-247-3​

Product Description Of RBN75H65T1FPQ-A0

RBN75H65T1FPQ-A0 is 650V, 75A Trench Insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power switching applications. It is available in a TO-247A package type.

Specification Of RBN75H65T1FPQ-A0

Features Of RBN75H65T1FPQ-A0

Trench gate and thin wafer technology (G8H series)
Built-in fast recovery diode in one package
Low collector to emitter saturation voltage VCE(sat) = 1.5V typ. (at IC = 75A, VGE = 15V, Ta = 25 °C)
Quality grade: Standard
High-speed switching
Non-specification for short circuit

Applications Of RBN75H65T1FPQ-A0

UPS
Welding
Photovoltaic inverters
Power converter systems

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