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Подробная информация о продукте:
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| Номер детали: | IPP65R190CFD | Напряжение стока к источнику (Vdss): | 650 В. |
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| Ток — непрерывный сток (Id) при 25°C: | 14A (Tc) | Rds On (Max) @ Id, Vgs: | 190mOhm @ 6.4A, 10V |
| Vgs(th) (Max) @ Id: | 4.5V @ 320µA | Рассеяние мощности: | 77W (Tc) |
| Выделить: | 650V Power MOSFET,190mOhm Integrated Circuit Chip,14A CoolMOS™ N-Channel |
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IPP65R190CFD Integrated Circuit Chip 650V CoolMOS™ N-Channel Power MOSFET Transistors Product Overview Of IPP65R190 IPP65R190 is a 650V CoolMOS™ CFD2 N-Channel Power MOSFET transistor from Infineon. This second-generation high-voltage MOSFET features an integrated fast body diode, offering improved energy efficiency and superior EMI behavior compared to competitor parts. Specifications Of IPP65R190 Parameter Value Transistor Polarity N-Channel Number of Channels 1 Channel Vds
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