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Подробная информация о продукте:
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| Номер детали: | IKW25N120T2 | Напряжение - разбивка излучателя коллекционера (макс): | 1200 В. |
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| Current - Collector (IC) (макс): | 50 а | Настоящий - пульсированный сборник (Icm): | 100 А |
| Мощность - Макс.: | 349 w | Переключая энергия: | 2.9mJ |
| Выделить: | 1200V IGBT Transistor,25A Integrated Circuit Chip,Anti-Parallel Diode Discrete IGBT |
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IKW25N120T2 Integrated Circuit Chip 1200V 25A IGBT Transistors With Anti-Parallel Diode Product Overview Of IKW25N120T2 IKW25N120T2 is a 1200V, 25A IGBT discrete with anti-parallel diode in TO-247-3 package. This TRENCHSTOP™ IGBT4 device combines trench-cell and fieldstop technology for significant improvements in both static and dynamic performance. The integration with a soft recovery emitter controlled diode further minimizes turn-on losses, achieving optimal efficiency
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